Effect of Via Etch Profile and Barrier Metal on Electromigration Performance of W-Filled Via Structure in TiN/AlCu/TiN Metallization
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electromigration improvements with titanium underlay and overlay in Al(Cu) metallurgyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Impact of test structure design on electromigration lifetime measurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- Electromigration reliability improvement of W-plug vias by titanium layeringPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- Electromigration in Al(Cu) two-level structures: Effect of Cu and kinetics of damage formationJournal of Applied Physics, 1993