The Use of Time Domain Techniques for Microwave Transistor s-Parameter Measurements

1 September 1975

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 74-78
https://doi.org/10.1109/euma.1975.332156

Abstract

The determination of microwave transistor s-parameter over a frequency band up to ≃ lOGHz by means of Time Domain Techniques, involving Fourier analysis and deconvolution of transient response data, is described and compared with network analyzer techniques. A method for the extraction of active device parameters from measurements on packaged devices is presented.

Keywords

MICROWAVE THEORY AND TECHNIQUES
MICROWAVE TRANSISTORS
SCATTERING PARAMETERS
MICROWAVE MEASUREMENTS
TIME MEASUREMENT
MICROWAVE DEVICES
FREQUENCY
TIME DOMAIN ANALYSIS
DECONVOLUTION
TRANSIENT RESPONSE

This publication has 2 references indexed in Scilit:

Measurement of the Intrinsic Properties of Materials by Time-Domain Techniques
IEEE Transactions on Instrumentation and Measurement, 1970
Time-domain measurements for transistor and network characterization up to 1 Gc
Proceedings of the IEEE, 1965