The decomposition of triethylgallium on Si(100)
- 1 July 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (4) , 725-728
- https://doi.org/10.1116/1.584633
Abstract
The decomposition of triethylgallium (TEG) on Si(100) is studied using temperature programmed desorption, x‐ray photoelectron spectroscopy, and electron energy‐loss spectroscopy. It is found that TEG adsorbs molecularly. It then decomposes mainly by a simple β‐hydrogen elimination mechanism yielding ethylene and adsorbed hydrogen. The ethylene desorbs in a peak centered at 600 K while the hydrogen desorbs in a sharper peak at 820 K. There is some carbon incorporation which is attributed to adsorption of an ethylene impurity. However, there is no evidence for carbon deposition during the TEG decomposition process itself.Keywords
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