Submicron Pseudomorphic Hemt’S Using Non-Alloyed Ohmic Contacts with Contrast Enhancement.
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Fundamental and practical aspects of alloying encapsulated gold-based contacts to GaAsThin Solid Films, 1987
- Characterization of extremely low contact resistances on modulation-doped FET'sIEEE Transactions on Electron Devices, 1985
- Extremely low contact resistances for AlGaAs/GaAs modulation-doped field-effect transistor structuresJournal of Applied Physics, 1985
- Models for contacts to planar devicesSolid-State Electronics, 1972