Position of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling
- 1 October 1993
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 143-147, 951-956
- https://doi.org/10.4028/www.scientific.net/msf.143-147.951
Abstract
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