Free energy model for bonding in a-Si alloys
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 137-138, 871-874
- https://doi.org/10.1016/s0022-3093(05)80258-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Free-energy model for bonding in amorphous covalent alloysPhysical Review B, 1991
- Optical dielectric function of hydrogenated amorphous silicon: Tetrahedron model and experimental resultsPhysical Review B, 1988
- Optical constants of a series of amorphous hydrogenated silicon-carbon alloy films: Dependence of optical response on film microstructure and evidence for homogeneous chemical orderingPhysical Review B, 1987
- Characterization of Silicon‐Oxynitride Films Deposited by Plasma‐Enhanced CVDJournal of the Electrochemical Society, 1986
- Characterization of Plasma Silicon Nitride LayersJournal of the Electrochemical Society, 1983
- Characterization of Plasma‐Deposited Silicon DioxideJournal of the Electrochemical Society, 1981
- Oxygen impurity states in an amorphous silicon matrixPhysical Review B, 1980
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- New Development in the Study of Amorphous Silicon Hydrogen Alloys: The Story of OPhysical Review Letters, 1978
- Direct evidence for homonuclear bonds in amorphous SiCSolid State Communications, 1974