Time-of-flight secondary ion mass spectrometry study of P2S5/(NH4)2S- and ultraviolet/ozone-treated GaAs
- 1 September 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 11 (5) , 2597-2602
- https://doi.org/10.1116/1.578612
Abstract
Time‐of‐flight secondary ion mass spectrometry has been applied to the characterization of P2S5/(NH4)2S‐treated and ultraviolet (UV)/ozone‐oxidized GaAs (100) surfaces. Emphasis is placed on investigating the structural and chemical characteristics of the UV/ozone‐induced oxide. Negative ion mass spectra obtained from passivated and UV/ozone‐treated GaAs surfaces showed the presence of an arsenic‐oxide‐rich top layer with traces of S. Shallow depth profiling through the topmost layers indicated the presence of a gallium‐oxide‐rich layer under the arsenic‐oxide‐rich layer in samples exposed to UV/ozone for 15 min or longer. The gallium‐oxide‐rich layer also contained traces of S. The growth of the gallium‐oxide‐rich region is directly related to the time spent in the UV/ozone oxidation step.Keywords
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