Effects of Sb doping on Si(001) surface roughening and epitaxial thickness at low growth temperatures (100–300 °C)
- 23 October 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (17) , 2459-2461
- https://doi.org/10.1063/1.114607
Abstract
The Sb incorporation probability in homoepitaxial Si(001) films grown by ultrahigh vacuum ion‐beam sputter deposition at temperatures Ts between 100 and 300 °C was found, using quantitative secondary ion mass spectrometry, to be unity with no evidence of surface segregation. Surface roughnesses and epitaxial thicknesses te were measured by atomic force microscopy and cross‐sectional transmission electron microscopy, respectively, for both undoped and Sb‐doped Si layers. Sb doping was found to dramatically increase the rate of surface roughening and to decrease te by a factor of ≳2 at growth temperatures between 250 and 300 °C while having no measurable effect at lower temperatures.Keywords
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