Acoustoelectric Effect and Intervalley Scattering Rates in Antimony-Doped Germanium
- 11 March 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 143 (2) , 584-587
- https://doi.org/10.1103/physrev.143.584
Abstract
The acoustoelectric effect in antimony-doped germanium has been measured as a function of temperature and doping by a method similar to that used by Weinreich, Sanders, and White for arsenic-doped germanium. The purpose of this experiment was to determine from the acoustoelectric effect the intervalley scattering rates for ionized and neutral antimony donors. Models for the scattering process are discussed, and the antimony rates are compared with those for arsenic. Our main result is that the rate per ionized antimony donor varies by a factor of 50 from 15 to 100°K, following approximately an inverse-square temperature dependence. The rate per ionized donor is a factor of 2 smaller than for arsenic at 20°K, and a factor of 10 smaller at 100°K.Keywords
This publication has 11 references indexed in Scilit:
- Amplification of Microwave Phonons in GermaniumPhysical Review Letters, 1964
- Acousteoelectric Effect of Microwave Phonons in GaAsPhysical Review Letters, 1964
- Intervalley scattering by donor ions in germaniumJournal of Physics and Chemistry of Solids, 1964
- Ultrasonic Wave Propagation in Doped-Germanium and-SiliconPhysical Review B, 1964
- Strong Acoustoelectric Effect in CdSPhysical Review Letters, 1962
- Acousto-Electric Explanation of Non-Ohmic Behavior in Piezoelectric Semiconductors and BismuthPhysical Review Letters, 1962
- Recombination of Electrons and Donors in-Type GermaniumPhysical Review B, 1961
- Acoustoelectric Effect in-Type GermaniumPhysical Review B, 1959
- Acoustodynamic Effects in SemiconductorsPhysical Review B, 1956
- Electrical Properties of-Type GermaniumPhysical Review B, 1954