Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers
- 17 April 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (16) , 2046-2047
- https://doi.org/10.1063/1.113687
Abstract
In this letter we report the fabrication and optical‐electrical characterization of violet‐blue GaN homojunction light emitting diodes. Rapid thermal annealing at 1150 °C (for 30 s) was used to activate the p‐dopant species (Mg), which resulted in p‐type GaN whose photoluminescence response centered around 438 nm is much stronger than that obtained from material annealed in the growth chamber at lower temperatures (700–800 °C) and a longer time (20 min).Keywords
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