GaAs read-type impatt diode for 130 GHz CW operation
- 25 June 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (13) , 471-473
- https://doi.org/10.1049/el:19810329
Abstract
A Schottky-barrier GaAs read-type impatt diode has been fabricated from the vapour-phase epitaxial material. CW oscillation at 130 GHz with an output of 5 mW and 0.5% efficiency has been achieved.Keywords
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