Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
Top Cited Papers
- 15 January 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 2, No) , L1-L3
- https://doi.org/10.1143/jjap.42.l1
Abstract
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