The effect of annealing on the structure and dielectric properties of BaxSr1−xTiO3 ferroelectric thin films
- 1 July 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 69 (1) , 25-27
- https://doi.org/10.1063/1.118106
Abstract
The effect of a postdeposition anneal on the structure and dielectric properties of epitaxial BaxSr1−xTiO3 (BST) thin films (x=0.35–0.65) have been measured. The films were grown by pulsed laser deposition on LaAlO3 (001) substrates. The films were single phase and (001) oriented with a lattice parameter larger than the bulk. The dielectric properties of the x=0.35 film exhibited a broad temperature dependence and a peak at 168 K, which is 36 K below the peak observed in bulk BST (x=0.35). Annealing films for 8 h in flowing oxygen at 900 °C caused the lattice parameter to decrease and dielectric properties to become more like the bulk. Annealing also resulted in an increased electric field dependent dielectric tuning without increased dielectric loss.Keywords
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