Structural Properties of Silicon Oxide Films Prepared by the RF Substrate Biased ECR Plasma CVD Method

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Abstract
The influence of radio frequency (RF) bias on preparation of silicon oxide (SiO) films by the microwave electron cyclotron resonance plasma CVD method has been investigated using a SiH4, O2 and Ar gas mixture. The compositional and structural properties of films were studied by infrared (IR) absorption, refractive index (RI), Auger electron spectroscopy (AES) and electron spin resonance (ESR) measurements in correlation with RF bias power. The films deposited with the RF bias have the RI values of 1.4∼1.7, and the O/Si value of 1.6∼1.9. The IR and ESR measurements revealed that the absorption caused by O-H bonds increased and the spin density was below the limit detectable by RF bias above 200 W.