Band structure model and dynamical dielectric function in lowest stages of graphite acceptor compounds

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Abstract
A 2D band structure model is proposed to describe electronic states in the lowest stages (n = 1, 2) of GAC. The tight binding method is applied taking into account intra and interlayer nearest neighbour interactions. From the energies and wavefunctions of the π valence and conduction bands, the frequency dependence of the complex dielectric function is derived. This model enables us to quantitatively analyse recent results of reflectivity in the region of the plasma edge and at higher energy obtained for various GAC (Br2, ICl, SbCl 5, AsF5). From the theoretical fits we deduce the charge transfer coefficient for several classes of GAC