Scanning tunneling microscopy study of initial stages of silicon molecular beam epitaxy
- 1 September 1990
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 8 (5) , 3657-3661
- https://doi.org/10.1116/1.576519
Abstract
Initial stages of Si molecular beam epitaxy on vicinal Si(001) substrates were investigated using scanning tunneling microscopy. It was found that at temperatures around 750 K first a preferential growth of one type of terrace occurs, leading to the formation of a single-domain surface. During continued growth both step flow and nucleation of islands occur. Disordered areas can block the step flow and antiphase disorder offers preferential nucleation sites.Keywords
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