Clean GaP(001)-(4×2) and H2S-treated (1×2)S surface structures studied by scanning tunneling microscopy
- 4 September 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (10) , 1432-1434
- https://doi.org/10.1063/1.114517
Abstract
Clean GaP(001)‐(4×2) and H2S‐treated (1×2) surfaces are studied by scanning tunneling microscopy (STM). We have observed a (4×2)/c(8×2) STM image for the cation‐stabilized GaP(001) surface. The result suggests that the unit cell of the (4×2) structure consists of two Ga dimers with two missing Ga dimers. For the (1×2)S surface, the previous model that sulfur atoms are adsorbed on the Ga dimer and that a missing row of sulfur is formed along the [11̄0] direction is supported by the STM result.Keywords
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