A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 419-422
- https://doi.org/10.1109/mwsym.1999.779792
Abstract
The development and behavior of a new model for Motorola's LDMOS transistor is described. The model includes self-heating effects, produces accurate small-signal simulations as well as large-signal, harmonic-balance simulations and also operates in the transient mode. It is simpler than previous models, yet it accurately predicts mixed signal effects, such as intermodulation distortion.Keywords
This publication has 2 references indexed in Scilit:
- A new empirical large signal model for silicon RF LDMOS FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A physical large signal Si MOSFET model for RF circuit designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002