4 Gbit/s GaAs MESFET laser-driver IC
- 28 August 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (18) , 932-933
- https://doi.org/10.1049/el:19860634
Abstract
A high-speed laser-driver IC has been fabricated using etched-gate enhancement/depletion-mode MESFET technology. It has been demonstrated that the device is capable of driving 25Ω load with 80 mA modulation current at up to 4 Gbit/s NRZ data rate.Keywords
This publication has 2 references indexed in Scilit:
- 2.24 Gbit/s Direct Modulation of Injection Laser by Monolithic Silicon MultiplexerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A GaAs Laser-Driver Operating up to 2Gbit/s Data RatePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985