Continuous Oscillation Observed in Silicon Surface Barrier Diodes under Intensive Illumination
- 1 October 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (10) , 661-662
- https://doi.org/10.1143/jjap.2.661
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The “Sogicon” –A New Type of Semiconductor OscillatorJournal of the Physics Society Japan, 1962
- Observation of Coherent Oscillation in GermaniumJournal of the Physics Society Japan, 1962
- Coherent Oscillation from Forward-Biased Point Contact on Silicon Single CrystalsJournal of the Physics Society Japan, 1962
- Oscillations in Germanium with an Applied Pulsed Electric FieldJournal of Applied Physics, 1960
- The Oscillistor—New Type of Semiconductor OscillatorJournal of Applied Physics, 1960