Electrochemically prepared Si(111) 1×1-H surface
- 19 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (3) , 397-399
- https://doi.org/10.1063/1.110054
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Electrolytic Hydrogenation of Silicon: A High Resolution Electron Energy Loss Spectroscopy InvestigationJournal of the Electrochemical Society, 1993
- Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutionsApplied Physics Letters, 1992
- Anodic oxides on siliconElectrochimica Acta, 1992
- Surface phonons of the hydrogen-terminated Si(111)(1×1) surfacePhysical Review B, 1992
- Electrolytic Hydrogenation of SiliconJournal of the Electrochemical Society, 1992
- Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4FChemical Physics Letters, 1991
- Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorptionPhysical Review Letters, 1990
- Coupling of an adsorbate vibration to a substrate surface phonon: H on Si(111)Physical Review Letters, 1990
- Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivationPhysical Review Letters, 1990
- Hydrogen vibrations on Si (111)Solid State Communications, 1981