Planar monolithic integration of a Schottky photodiode and a GaAs field-effect transistor for 0.8 μm-wavelength applications
- 12 September 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 21 (19) , 878-879
- https://doi.org/10.1049/el:19850620
Abstract
A planar monolithic integrated photoreceiver suitable for 0.8 μm-wavelength optical communication systems has been realised. It consists of a GaAs Schottky photodiode associated with a GaAs FET. Sensitivities, response times and noise properties of the integrated circuit have been measured and are explained, taking into account various effects such as doping level, thickness of the depletion region and capacitance of the diode.Keywords
This publication has 0 references indexed in Scilit: