Use of 1,1-Dimethylhydrazine in the Atomic Layer Deposition of Transition Metal Nitride Thin Films

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Abstract
Atomic layer deposition (ALD) of TiN, , NbN, and thin films from the corresponding metal chlorides and 1,1 ‐dimethylhydrazine (DMHy) was studied. Generally, the films deposited at 400°C exhibited better characteristics compared to the films deposited at the same temperature using as the nitrogen source. In addition, films could be deposited at lower temperatures down to 200°C. Even though the carbon content in the films was quite high, in the range of 10 atom %, the results encourage further studies. Especially the effect of carbon on the barrier properties and the use of other possibly less carbon‐contaminating hydrazine derivatives should be studied. © 2000 The Electrochemical Society. All rights reserved.

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