Valence-Electron Density in Silicon and InSb under High Pressure by X-Ray Diffraction
- 8 November 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 49 (19) , 1438-1441
- https://doi.org/10.1103/physrevlett.49.1438
Abstract
The effects of high pressure on the valence-electron density in silicon and indium antimonide are investigated by x-ray diffraction. It is found that near the transition to the metallic -tin structure the scattering from the valence electrons sharply decreases, indicating either smearing of the bonding charges or increased anharmonicity in the thermal vibrations.
Keywords
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