MBE-grown insulating oxide films on GaAs

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Abstract
The technique of molecular beam epitaxy (MBE) has been used to grow two types of insulating oxide films on the surface of GaAs active layers; (i) a native oxide and (ii) an amorphous aluminium oxide, respectively. Native oxides on (100) GaAs obtained by thermal oxidation at 400°C under MBE conditions were found to be suitable for masking purposes and pattern generation because of their favorable mechanical and interface properties. Insulating amorphous aluminium oxide films were grown by molecular beam reaction on an intermediate AlxGa1−xAs layer, in order to preserve the stoichiometry of the GaAs active layer surface. The initial measurements on Al/Al2O3/Al0.35Ga0.65As/GaAs MOS capacitors have shown that favorable mechanical and insulating behavior can be obtained with Al2O3 layers grown at low temperatures and that the properties are sufficiently promising to investigate the MOS device potential of these Al2O3/AlxGa1−xAs/GaAs heterostructures.

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