Properties of Plasma‐Enhanced CVD Silicon Films: I : Undoped Films Deposited from 525° to 725°C

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Abstract
Undoped silicon films deposited by plasma‐enhanced CVD from dichlorosilane in argon over the temperature range 525°–725°C have been studied, and their properties have been compared with those of LPCVD silicon films deposited from silane. Significant compressive stresses of are seen in PECVD films. X‐ray, TEM, and reflectance measurements show that the films deposited at 600°C and below are amorphous, while those deposited at 625°C are polycrystalline with a poorly defined structure. A better developed polycrystalline structure is obtained at higher deposition temperatures, although the dominant {110} texture does not develop as readily as in LPCVD films. A polycrystalline structure begins to form at temperatures about 25°–35°C higher in the PECVD films than in LPCVD films. After annealing at 1000°C, all PECVD films are polycrystalline. The resistivities of films doped with phosphorus by ion implantation or from a gaseous source are lower for the initially polycrystalline films than for the initially amorphous films. PECVD films deposited at 625°C have higher resistivities than do LPCVD films deposited at the same temperature.

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