Modeling of disorder induced by thermal spikes in ion bombarded silicon

1 January 1985

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 87 (2) , 91-99
https://doi.org/10.1080/01422448508205239

Abstract

In this work the temperature distribution in the impact region of a silicon target bombarded with N⁺, P⁺ and As⁺, ions is calculated by simulating the displacement cascades with a Monte Carlo method and calculating the temperature profile within the individual cascade. In the case of P⁺ and As⁺ very small cascades may form, well below the average cascade volume. They energize hot thermal spikes with temperature above melting. An appreciable disordering results from the cooling of these melted regions containing thousands of atoms.

Keywords

MONTE CARLO METHOD

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