Optical properties of InAsySb1−y layers prepared by thermal evaporation
- 1 March 1964
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 4 (1) , 57-65
- https://doi.org/10.1016/0020-0891(64)90043-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- New Emission Continuum of Helium in the Vacuum Ultraviolet RegionJournal of the Optical Society of America, 1961
- Electron Effective Masses of InAs and GaAs as a Function of Temperature and DopingPhysical Review B, 1961
- The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effectJournal of Physics and Chemistry of Solids, 1959
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957