In-Diffusion and Isothermal Annealing of Iron-Related Defects in n-Type Silicon

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Abstract
In iron-related deep levels in n-type silicon, the introduced concentration of E c-0.21 eV(B) and E c-0.41 eV(C) levels decrease with increasing the diffusion time at 1160°C, indicating that the formation process includes the conversion process into other types of complexes. The concentration of the C level decays exponentially with the duration of isothermal annealing up to 200°C, the time constant activation energy being 0.65 eV. The results indicate that the observed defects are due to the intermediate states in consecutive reactions of iron-related complex formation.

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