New methods for carrier lifetime measurements in PπN structures
- 30 September 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (9) , 999-1005
- https://doi.org/10.1016/0038-1101(73)90199-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Une méthode impulsionnelle de mesure de la durée de vie des porteurs injectés dans la zone centrale d'une structure pinRevue de Physique Appliquée, 1971
- Use of microwave techniques for measuring carrier lifetime and mobility in semiconductorsSolid-State Electronics, 1969
- Recombination in silicon p−π−n diodesSolid-State Electronics, 1967