Stable, self-aligned TiNxOy/TiSi2 contact formation for submicron device applications
- 1 June 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (22) , 1598-1600
- https://doi.org/10.1063/1.97792
Abstract
The formation of the TiNxOy/TiSi2 bilayer on Si by rapid thermal nitridation of titanium silicide in NH3 has been studied. The chemical stability in dilute HF and the effectiveness of TiNxOy on TiSi2 as a diffusion barrier for Al are discussed. The results show that this bilayer has good chemical stability in dilute HF at least for 60 s and Al/TiNxOy/TiSi2/Si is thermally stable up to 500 °C for 30 min sintering.Keywords
This publication has 8 references indexed in Scilit:
- Novel submicrometer MOS devices by self-aligned nitridation of silicideIEEE Transactions on Electron Devices, 1986
- Formation of TiSi2 and TiN during nitrogen annealing of magnetron sputtered Ti filmsJournal of Vacuum Science & Technology A, 1985
- Performance of titanium nitride diffusion barriers in aluminum–titanium metallization schemes for integrated circuitsJournal of Vacuum Science & Technology A, 1985
- Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titaniumIEEE Electron Device Letters, 1985
- Development of the Self-Aligned Titanium Silicide Process for VLSI ApplicationsIEEE Journal of Solid-State Circuits, 1985
- Investigation of the Al/TiSi2/Si contact systemJournal of Applied Physics, 1983
- Properties of TiN obtained by N+2 implantation on Ti-coated Si wafersApplied Physics Letters, 1982
- TiN formed by evaporation as a diffusion barrier between Al and SiJournal of Vacuum Science and Technology, 1982