HgCdTe heterojunction contact photoconductor
- 1 July 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (1) , 83-85
- https://doi.org/10.1063/1.94978
Abstract
A new photoconductor device structure is described utilizing a heterojunction contact which incorporates a higher band-gap HgCdTe alloy between the metal contact and the normal band-gap photoconductor. A theoretical treatment of the heterojunction contact photoconductor (HCP) device shows that carrier sweepout can be virtually eliminated; the calculations predict elimination of ‘‘saturation’’ of responsivity and a very large increase in responsivity. HCP devices were fabricated; experimental results verified the theory in several ways. A responsivity was measured at 80 K of about 450 000 V/W at 30 V/cm and over 1 500 000 V/W at 125 V/cm.Keywords
This publication has 3 references indexed in Scilit:
- Horizontal slider LPE of (Hg,Cd)TeJournal of Vacuum Science & Technology A, 1983
- Accumulation effects at contacts to n-type cadmium-mercury-telluride photoconductorsInfrared Physics, 1982
- Contact and bulk effects in intrinsic photoconductive infrared detectorsInfrared Physics, 1981