Silicon High-Resistivity-Substrate Millimeter-Wave Technology
- 1 December 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 34 (12) , 1516-1521
- https://doi.org/10.1109/tmtt.1986.1133572
Abstract
The application of molecular beam epitaxy (MBE) and X-ray lithography for the fabrication of monolithic integrated millimeter-wave devices on high-resistivity silicon has been investigated. Process compatibility and the retention of high-resistivity characteristics were measured using the spreading resistance method and Hall measurements after various process steps. Microstrip resonators of ring and linear geometry were fabricated ou 10 000 Omega · cm silicon substrates. For linear microstrip resonators, the attenuation was found to be less than 0.6 dB/cm at 90 GHz. A 95-GHz IMPATT oscillator circuit and a planar microstrip antenna array have been fabricated on highly insulating silicon substrates. For the oscillator, a combined monolithic-hybrid integration technique was used to attach the discrete IMPATT diode to the resonator circuit. The oscillator does not require tuning elements. Preliminary experimental results are 8 mW of output power with 0.2 percent efficiency at 95 GHz.Keywords
This publication has 4 references indexed in Scilit:
- High Speed Integrated Circuit Using Silicon Molecular Beam Epitaxy (Si‐MBE)Journal of the Electrochemical Society, 1985
- Microstrip IMPATT-diode oscillator for 100 GHzElectronics Letters, 1981
- Millimeter-Wave Microstrip Oscillators (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1974
- Optimization of Diode Structures for Monolithic Integrated Microwave CircuitsIEEE Journal of Solid-State Circuits, 1968