Thermal turnover in germanium p-n junctions
- 1 November 1957
- journal article
- Published by Institution of Engineering and Technology (IET) in Proceedings of the IEE - Part B: Radio and Electronic Engineering
- Vol. 104 (18) , 555-564
- https://doi.org/10.1049/pi-b-1.1957.0205
Abstract
The static reverse characteristics of an alloyed germanium p-n junction are analysed, taking into account an avalanche multiplication factor. The condition for thermal stability is examined, the onset of thermal runaway is related to a thermal turnover phenomenon, and the existence of a negative-resistance region is predicted.The existence of such thermal negative-resistance regions in germanium p-n junctions has been verified experimentally, and the results are analysed semi-quantitatively, showing fairly good agreement with the theory.Keywords
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