Hydrogen coverage during Si growth from SiH4 and Si2H6
- 6 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (1) , 53-55
- https://doi.org/10.1063/1.107371
Abstract
Time‐of‐flight direct recoiling (DR) measurements of surface hydrogen coverage (θH) are made in situ during chemical beam epitaxy growth of Si from Si2H6 on Si(100) as a function of temperature and disilane flux. Temperatures (T) of 300–900 °C and fluxes from 1015 to 1017 molecules cm−2 s−1 are used. Limited data for SiH4 are also presented. Predictions of θH from a steady state kinetic model are compared with the measurements, enabling the reactive sticking probability (S) of Si2H6 to be estimated at T≳500 °C.Keywords
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