Submicrometer Interdigital Silicon Detectors For The Measurement Of Picosecond Optical Pulses

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Abstract
Interdigital silicon Schottky barrier diodes have been evaluated for picosecond pulse measurements. Structures with clearly defined receiving apertures and submicrometer contact spacings were created with electron beam lithography. The detectors exhibit saturation currents corresponding to the absorbed optical power. Impulse response widths were less than 50 ps, and response maps yielded uniform patterns. A peak quantum efficiency of over 30 percent was obtained, and the usable spectral responsivity extends beyond 2 μm.

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