Photoluminescence studies of p- and n-type ZnS layers grown by vapor phase epitaxy
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 348-352
- https://doi.org/10.1016/0022-0248(92)90773-c
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology (02205049, 03205050)
This publication has 8 references indexed in Scilit:
- Photoluminescence of Li-doped ZnSe single crystalsJournal of Crystal Growth, 1992
- Growth and characterization of p-type VPE ZnS layersJournal of Crystal Growth, 1990
- P-Type Conduction in ZnS Grown by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1989
- Nitrogen and phosphorus doping in ZnS layers grown by vapor phase epitaxy on GaAs substratesJournal of Crystal Growth, 1988
- Vapor phase epitaxial growth and characterization of ZnS layer on GaAs substrate for LED applicationJournal of Crystal Growth, 1985
- Excitonic and time-resolved edge emissions of iodine-doped cubic ZnS crystals excited by an excimer laserSolid State Communications, 1984
- Optical properties of undoped organometallic grown ZnSe and ZnSJournal of Crystal Growth, 1982
- The role of impurities in refined ZnSe and other II–VI semiconductorsJournal of Crystal Growth, 1982