A 1.59 µm Wavelength GaInAsP/InP Distributed Feedback Laser with First-Order Grating on Anti-Meltback Layer

Publisher Website
Google Scholar
Abstract
A 1.59 µm wavelength GaInAsP/InP distributed feedback laser with first-order grating has been fabricated by a two-step liquid phase epitaxial (LPE) growth. The first-order grating was formed on the anti-meltback layer grown on the active layer. The threshold current was 680 mA for 18 µm stripe width and 510 µm cavity length and single-longitudinal-mode operation was obtained from –50 to 0°C.