Vertical n-p-n bipolar transistors fabricated on buried oxide SOI

1 March 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (3) , 91-93
https://doi.org/10.1109/EDL.1984.25842

Abstract

Vertical n-p-n bipolar transistors have been fabricated in silicon-on-insulator (SOI) films prepared by buried oxide implantation. Electrical device characteristics are shown to be comparable to those obtained on devices fabricated in bulk silicon, indicating no significant degradation owing to the buried oxide layer. Dielectric isolation in excess of 1011Ω.cm and µ 3 × 106V/cm is measured.

Keywords

BIPOLAR TRANSISTORS
IMPLANTS
FABRICATION
MOSFETS
SILICON ON INSULATOR TECHNOLOGY
ETCHING
DEGRADATION
RESISTS
SUBSTRATES
ANNEALING