Negative R _z and R _d in GaAs FET and HEMT equivalent circuits

1 May 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (10) , 680-682
https://doi.org/10.1049/el:19900445

Abstract

A physical basis for negative R_z and R_d values is outlined. The implications for FET measurements, equivalent circuits, FET scaling and large-signal FET model extraction are discussed.

Keywords

EQUIVALENT CIRCUITS
DRAIN RESISTANCE
FET MEASUREMENTS
SOURCE RESISTANCE
HEMT
FET SCALING
GAAS
LARGE-SIGNAL FET MODEL EXTRACTION

Negative R z and R d in GaAs FET and HEMT equivalent circuits

Abstract

Keywords

Negative R _z and R _d in GaAs FET and HEMT equivalent circuits