Accelerated stability test of a-Si:H by defect saturation

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Abstract
The temperature dependence of the saturated light‐induced defect density (Nsat) of a‐Si:H was measured while precisely controlling sample temperature during illumination. Nsat decreases if the sample temperature is held above 75 °C to 100 °C, and increases below 50 °C. At intermediate temperature Nsat levels off. The two thermally activated regions of Nsat suggest that the activation energy of the annealing process has a distribution with two peaks. In experiments geared to raising the stability of a‐Si:H, we found that Nsat is reduced to the lowest value measured so far by thermal annealing at 190 °C for 3 to 19 hours prior to light‐soaking. This result suggests that the microscopic structure of a‐Si:H plays on important role in stability.

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