Structural properties of fluorinated SiO2 thin films
- 31 January 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 50 (1-4) , 67-74
- https://doi.org/10.1016/s0167-9317(99)00266-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materialsJournal of Vacuum Science & Technology A, 1998
- Reasons for lower dielectric constant of fluorinated SiO2 filmsJournal of Applied Physics, 1998
- Structure and chemical composition of fluorinated SiO2 films deposited using SiF4/O2 plasmasJournal of Vacuum Science & Technology A, 1997
- Water Absorption Properties of Fluorine-Doped SiO2 Films Using Plasma-Enhanced Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel InterconnectionsJournal of the Electrochemical Society, 1996
- Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor depositionApplied Physics Letters, 1996
- Structural characterization of photochemically grown silicon dioxide films by ellipsometry and infrared studiesJournal of Applied Physics, 1993
- Band limits and the vibrational spectra of tetrahedral glassesPhysical Review B, 1979
- Phonons inglasses: From molecular to band-like modesPhysical Review B, 1977