Principles of a Three Dimensional Molecular Electronic Memory

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Abstract
The principles of using an electronically highly anisotropic insulator as a memory are described. As an example a Langmuir Blodgett (LB) multilayer -film of polydiacetylene (PDA), of repeat unit C=RC-C=C-CR =J, is considered. Excess injected electrons in a PDALB -film reside in the high mobility conduction bands along the PDA backbones which are in the plane o-f the layer. Diffusion within the layer planes is rapid. The electrons occasionally hop to the next layer plane. N layers can store one N bit word, the presence or absence of electrons in the n th layer denoting a 1 or 0 of the n th bit.Means for writing in the charge, controlling its motion between the layers with fields, and reading out the charge are described. Layers of alternating high and low electron affinity are discussed; they give a much longer storage time in zero field, the electrons then being confined to the high affinity layers.