Drift Rate and Precipitation of Lithium in Germanium
- 1 June 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 13 (3) , 245-251
- https://doi.org/10.1109/tns.1966.4324106
Abstract
During the study of P-I-N Ge (Li) junctions to be used for gamma-ray spectrometers, it appeared that the drift process of Li+ ions is strongly depending on the nature of the raw materials: in similar conditions, the maximum width of the compensated region can change from less than 1 mm to more than 5 mm. The influence on drift rate of several factors is studied : resistivity, nature of acceptors (Ga, In, Zn), lifetime of minority carriers, copper diffusion. Attention is given to lithium precipitation. Using different thermoelectric probes (described) the concentration of Li+ ions and the rate of precipitation can be measured. The effect of lithium precipitation on drift rate is discussed.Keywords
This publication has 8 references indexed in Scilit:
- Techniques for the fabrication of lithium driftef germanium gamma detectorsNuclear Instruments and Methods, 1964
- Relation Between Surface Concentration and Average Conductivity in Diffused Layers in GermaniumBell System Technical Journal, 1961
- Physics and characteristics of the cross-film cryotron—A reviewSolid-State Electronics, 1960
- On the Kinetics and Mechanism of the Precipitation of Lithium from GermaniumJournal of Applied Physics, 1960
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956
- Proton-Proton Scattering at 5.77 MevPhysical Review B, 1954
- Mobility of Impurity Ions in Germanium and SiliconPhysical Review B, 1953