Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure
- 16 September 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 91 (1) , K5-K8
- https://doi.org/10.1002/pssa.2210910141
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetryJournal of Applied Physics, 1981
- Physical investigations on amorphous films of some semiconducting compoundsJournal of Non-Crystalline Solids, 1980
- The structure of tetrahedrally coordinated amorphous semiconductorsJournal of Non-Crystalline Solids, 1973