Characterization of asymmetric coupled CMOS lines
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 609-612 vol.2
- https://doi.org/10.1109/mwsym.2000.863258
Abstract
This paper investigates the properties of asymmetric coupled lines built in a 0.25 /spl mu/m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.Keywords
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