Ultrafast dynamics of laser-excited electron distributions in silicon
- 28 February 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (9) , 1364-1367
- https://doi.org/10.1103/physrevlett.72.1364
Abstract
Time-resolved photoelectron spectroscopy is used to directly observe the energy relaxation of optically excited electrons in silicon with 150 fsec resolution. We observe an electron-electron thermalization time of initial electron cooling rate, followed by an electron-phonon thermalization time of ∼1 psec, and overall a strong energy dependence to the electron scattering rate. Here, we also report a new effect in two-photon photoemission unique to ultrashort laser pulses, resulting in a sensitive new monitor of electron dynamics.Keywords
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