Abstract
A novel method for imaging individual defect structures contained within thin, insulating layers that cover atomically smooth conducting substrates is described. The technique relies upon imaging metal islands electrochemically deposited within defects that penetrate the insulating layer by scanning tunneling microscopy. The method is illustrated by measuring the rate of self‐assembly of a monolayer of on a Au (111) substrate. The results are found to be in accord with those obtained by spectroscopic and contact angle measurements.

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