Mesh emitter transistor

1 April 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (4) , 742-743
https://doi.org/10.1109/PROC.1968.6366

Abstract

This letter presents a new transistor called a mesh emitter transistor (MET) which is designed for high power in a high-frequency range. The output of 10 watts at 400 MHz was obtained with 7 dB gain and 50 percent efficiency in spite of a small collector area of 0.16 mm².

Keywords

ADMITTANCE
CIRCUITS
RADIO FREQUENCY
POISSON EQUATIONS
LATTICES
SPACE CHARGE
CHARGE CARRIER DENSITY
CHARGE CARRIERS
PROPAGATION LOSSES
TRANSMISSION LINE THEORY

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