Physical and Chemical Properties of Silicon Dioxide Film Deposited by New Process
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Low-temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopyJournal of Vacuum Science & Technology B, 1987
- Raman study of fluorine-doped silica gelsJournal of Non-Crystalline Solids, 1986
- Magnetron‐Sputtered SiO2 Films in Hydrogen‐Argon MixturesJournal of the Electrochemical Society, 1984
- Ultrafast laser-induced oxidation of silicon: A new approach towards high quality, low-temperature, patterned SiO2 formationApplied Physics Letters, 1984
- Photo-Induced Chemical Vapor Deposition of SiO2 Film Using Direct Excitation Process by Deuterium LampJapanese Journal of Applied Physics, 1984
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Structural Evaluation of Silicon Oxide FilmsJournal of the Electrochemical Society, 1965
- Zur Kenntnis der SiO- und Si 2 O 3 -Phase in Dünnen SchichtenOptica Acta: International Journal of Optics, 1962